Sic Mosfet Gate Driver

How to fine tune your sic mosfet gate driver to minimize losses l.

Sic mosfet gate driver.

Igbt sic gate driver fundamentals. Decades of application expertise and technology development at both infineon and international rectifier have produced a portfolio of gate driver ics for use with silicon and wide bandgap power devices such as mosfets discrete igbts igbt modules sic mosfets and gan hemts we offer excellent product families of galvanic isolated gate drivers automotive qualifies gate drivers 200 v 500 700. Power electronics today is about the constant pursuit of efficiency improvements as well as cost and size reduction. Wolfspeed s cgd15sg00d2 is a gate driver board specifically designed to support 900v and 1200v 3rd generation sic mosfets with high creepage 9mm clearance.

While this e book goes into further detail you can jump into the most relevant topics for your design at the right. Pi s new sic1182k scale idriver ic is a high efficiency single channel sic mosfet gate driver that delivers the highest peak output gate current available without an external boost stage. Scale idriver sic mosfet gate driver ics. By providing high peak current during turn on and turn off switching losses are also minimized.

To obtain less vth shift rohm guarantees for its sic mosfets a gate source voltage of 22v 6v. To achieve the lowest possible conduction losses the driver is capable to deliver the maximum allowable gate voltage to the sic mosfet device. In sic mosfet half bridges where the 3 3 mm channel to channel creepage distance between the two output channels of a dual channel isolated gate driver ic is insufficient a hybrid combination consisting of one single channel isolated gate driver ic for the boot strapped high side and one non isolated gate driver ic with truly differential. This is also the voltage under which all reliability tests e g.

Silicon carbide sic mosfets that become a visible part of the mosfet market require special gate drivers that are able to provide a negative voltage to the gate in a mosfets off state high charge discharge pulse current and are fast enough to operate gate in the nanoseconds range. The real benefit of the smaller sic mosfet die comes in the form of lower input capacitance ciss which translates to lower required gate charge qg. In this challenging power conversion scenario silicon carbide sic power switches are gaining. Mosfet die internal gate resistance tends to be higher.

It can be configured to support different gate drive voltages matching the range of requirements seen in today.